Paper Titles

Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors
p.1

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
p.7

Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices
p.13

Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters
p.23

Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
p.31

Modeling the Charging of Gate Oxide under High Electric Field
p.37

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
p.45

Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C
p.51

HomeSolid State PhenomenaSolid State Phenomena Vol. 358Coupled Non-Destructive Methods, Kelvin Force...

Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Article Preview

Abstract:

Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local surface potential measurements by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy (SEM) and µ-Raman spectroscopy. Near-field mappings of the devices’ surface have been realized, allowing us to discern the differently doped areas.

By email View Pdf

You might also be interested in these eBooks

20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Processing and Characteristics of Solid-State Structures

Info:

Periodical:

Solid State Phenomena (Volume 358)

Pages:

13-21

DOI:

https://doi.org/10.4028/p-sUIlP5

Citation:

Cite this paper

Online since:

August 2024

Authors:

Enora Vuillermet, Kuan Ting Wu, Anael Sedilot, Regis Deturche, Nicolas Bercu, Elise Usureau, Jérémie Beal, Mihai Lazar*

Keywords:

AFM, Devices Characterization Methods, JFET, KPFM, SEM, SiC Power Devices, μ-Raman

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

[1] W. Cao, S. Ying, X. Ge, D. Liu, SiC Superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery Ruggedness, Micro and Nanostructures (2024) 207847.

DOI: 10.1016/j.micrna.2024.207847

[2] B. Shi, A.I. Ramones, Y. Liu, H. Wang, Y. Li, S. Pischinger, J. Andert, A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development, IET Power Electronics 16 (2023) 2103–2120.

DOI: 10.1049/pel2.12524

[3] J. Camassel, S. Contreras, Matériaux semiconducteurs à grand gap : le carbure de silicium (SiC), Électronique (2012).

DOI: 10.51257/a-v2-e1990

[4] W.C. Mitchel, W.D. Mitchell, M.E. Zvanut, G. Landis, High temperature Hall effect measurements of semi-insulating 4H–SiC substrates, Solid-State Electronics 48 (2004) 1693–1697.

DOI: 10.1016/j.sse.2004.02.025

[5] M.A. Pinault-Thaury, F. Jomard, Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide, Materials Science Forum 1062 (2022) 376–382.

DOI: 10.4028/p-684nsi

[6] M. Lazar, F. Enoch, F. Laariedh, D. Planson, P. Brosselard, Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State, Materials Science Forum 679–680 (2011) 477–480.

DOI: 10.4028/www.scientific.net/MSF.679-680.477

[7] M. Lazar, F. Laariedh, P. Cremillieu, D. Planson, J.-L. Leclercq, The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015) 256–259.

DOI: 10.1016/j.nimb.2015.07.033

[8] F. Laariedh, M. Lazar, P. Cremillieu, J. Penuelas, J.-L. Leclercq, D. Planson, The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC, Semicond. Sci. Technol. 28 (2013) 045007.

DOI: 10.1088/0268-1242/28/4/045007

[9] S. Nakashima, H. Harima, Raman Investigation of SiC Polytypes, Physica Status Solidi (a) 162 (1997) 39–64. https://doi.org/10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L.

DOI: 10.1002/1521-396x(199707)162:1<39::aid-pssa39>3.0.co;2-l

[10] Z. Xu, Z. He, Y. Song, X. Fu, M. Rommel, X. Luo, A. Hartmaier, J. Zhang, F. Fang, Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining, Micromachines 9 (2018) 361.

DOI: 10.3390/mi9070361

[11] Y. Song, Z. Xu, T. Liu, M. Rommel, H. Wang, Y. Wang, F. Fang, Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy, Crystals 10 (2020) 131.

DOI: 10.3390/cryst10020131

[12] Kelvin Probe Force Microscopy (KPFM), (n.d.). https://www.bruker.com/en/products-and-solutions/microscopes/materials-afm/afm-modes/kpfm.html (accessed September 14, 2023).

[13] N. Bercu, M. Lazar, O. Simonetti, P.M. Adam, M. Brouillard, L. Giraudet, KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices, MSF 1062 (2022) 330–334.

DOI: 10.4028/p-c35702

[14] U. Gysin, E. Meyer, Th. Glatzel, G. Günzburger, H.R. Rossmann, T.A. Jung, S. Reshanov, A. Schöner, H. Bartolf, Dopant imaging of power semiconductor device cross sections, Microelectronic Engineering 160 (2016) 18–21.

DOI: 10.1016/j.mee.2016.02.056

[15] M. Buzzo, M. Ciappa, W. Fichtner, Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast, IEEE Transactions on Device and Materials Reliability 6 (2006) 203–212.

DOI: 10.1109/TDMR.2006.876605

[16] S. Chung, V. Wheeler, R. Myers-Ward, L.O. Nyakiti, C.R. Eddy, D.K. Gaskill, M. Skowronski, Y.N. Picard, Secondary electron dopant contrast imaging of compound semiconductor junctions, Journal of Applied Physics 110 (2011) 014902.

DOI: 10.1063/1.3597785

[17] H. Rossmann, U. Gysin, A. Bubendorf, T. Glatzel, S.A. Reshanov, A. Schöner, T.A. Jung, E. Meyer, H. Bartolf, Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers, Materials Science Forum 821–823 (2015) 269–272.

DOI: 10.4028/www.scientific.net/MSF.821-823.269

[18] Th. Glatzel, S. Sadewasser, R. Shikler, Y. Rosenwaks, M.Ch. Lux-Steiner, Kelvin probe force microscopy on III–V semiconductors: the effect of surface defects on the local work function, Materials Science and Engineering: B 102 (2003) 138–142.

DOI: 10.1016/S0921-5107(03)00020-5

[19] F. Roccaforte, F. Giannazzo, G. Greco, Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices, Micro 2 (2022) 23–53.

DOI: 10.3390/micro2010002

[20] Y.-D. Tang, X.-Y. Liu, Z.-D. Zhou, Y. Bai, C.-Z. Li, Defects and electrical properties in Al-implanted 4H-SiC after activation annealing*, Chinese Phys. B 28 (2019) 106101.

DOI: 10.1088/1674-1056/ab3cc2

[21] J. Weise, C. Csato, M. Hauck, J. Erlekampf, S. Akhmadaliev, M. Rommel, H. Mitlehner, M. Rub, M. Krieger, A. Bauer, V. Haublein, T. Erlbacher, L. Frey, Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC, 2018 22nd International Conference on Ion Implantation Technology (IIT) (2018) 66–69.

DOI: 10.1109/IIT.2018.8807980

[22] J.C. Burton, L. Sun, F.H. Long, Z.C. Feng, I.T. Ferguson, First- and second-order Raman scattering from semi-insulating 4H-SiC, (n.d.) 3.

[23] X. Qin, X. Li, X. Chen, X. Yang, F. Zhang, X. Xu, X. Hu, Y. Peng, P. Yu, Raman scattering study on phonon anisotropic properties of SiC, Journal of Alloys and Compounds 776 (2019) 1048–1055.

DOI: 10.1016/j.jallcom.2018.10.324

[24] X.-B. Li, Z.-Z. Chen, E.-W. Shi, Effect of doping on the Raman scattering of 6H-SiC crystals, Physica B: Condensed Matter 405 (2010) 2423–2426.

DOI: 10.1016/j.physb.2010.02.058

[25] H. Harima, S. Nakashima, T. Uemura, Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC, Journal of Applied Physics 78 (1995) 1996–2005.

DOI: 10.1063/1.360174

[26] T. Mitani, S. Nakashima, M. Tomobe, S. Ji, K. Kojima, H. Okumura, Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC, Materials Science Forum 778–780 (2014) 475–478.

DOI: 10.4028/www.scientific.net/MSF.778-780.475

[27] H. Harima, T. Hosoda, S. Nakashima, Carrier Density Evaluation in P-Type SiC by Raman Scattering, MSF 338–342 (2000) 607–610.

DOI: 10.4028/www.scientific.net/MSF.338-342.607

[28] P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, L. Konczewicz, S. Contreras, J. Camassel, S. Juillaguet, Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD, Materials Science Forum 806 (2015) 51–55.

DOI: 10.4028/www.scientific.net/MSF.806.51

[29] S. Lin, Z. Chen, L. Li, C. Yang, Effect of impurities on the Raman scattering of 6H-SiC crystals, Mat. Res. 15 (2012) 833–836.

DOI: 10.1590/S1516-14392012005000108

[30] S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, N. Ohtani, Raman scattering study of carrier-transport and phonon properties of 4 H − Si C crystals with graded doping, Phys. Rev. B 76 (2007) 245208.

DOI: 10.1103/PhysRevB.76.245208

[31] H. Harima, Raman scattering characterization on SiC, Microelectronic Engineering 83 (2006) 126–129.

DOI: 10.1016/j.mee.2005.10.037

[32] K. Piskorski, M. Guziewicz, M. Wzorek, L. Dobrzański, Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy, AIP Advances 10 (2020) 055315.

DOI: 10.1063/1.5144579

[33] K. Kamalakkannan, R. Rajaraman, B. Sundaravel, G. Amarendra, K. Sivaji, Raman studies in Al+ implanted semi insulating 6H-SiC, Materials Letters 344 (2023) 134404.

DOI: 10.1016/j.matlet.2023.134404