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Paper Titles
Preface
Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors
p.1
Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
p.7
Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices
p.13
Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters
p.23
Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
p.31
Modeling the Charging of Gate Oxide under High Electric Field
p.37
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
p.45
Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C
p.51

Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters

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Abstract:

New and original medium power multi-terminal SiC monolithic converter architectures are investigated with vertical switching cells based on SiC JBS diodes and VDMOS transistors. 2D TCAD and mixed-mode Sentaurus™ simulations are performed to optimize switching structures as Buck, Boost, H-bridge high-side row chip common drain-type and low-side row chip common source-type. The proper operation in the turn-on and turn-off of each cell is also studied and validated. To fabricate these new monolithic integrated architectures, two main technological bricks have been developed, for vertical insulation and the integration of a top Ni metal via. To achieve the vertical insulation deep trenches are necessary combining dry plasma and wet KOH electrochemical etching through the thick N+ substrate.

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Periodical:

Solid State Phenomena (Volume 358)

Pages:

23-30

DOI:

https://doi.org/10.4028/p-pzTJ4o

Citation:

Cite this paper

Online since:

August 2024

Authors:

Ralph Makhoul, Nour Beydoun, Abdelhakim Bourennane, Luong Viet Phung, Frédéric Richardeau, Mihai Lazar*, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier

Keywords:

Boost Converter, Buck Converter, Deep Trench, H-Bridge, Metallic Via, Monolithic Integration, Ni Electroplating, SiC Deep Etching

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Creative Commons CC BY 4.0

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* - Corresponding Author

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