Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications

Emad Andarawis; David Shaddock; Tammy Johnson; Shubhodeep Goswami; Reza Ghandi

doi:10.4028/p-NpIBY5

Paper Titles

UIS Ruggedness of Parallel 4H-SiC MOSFETs
p.65

The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
p.71

Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
p.77

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
p.85

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
p.93

High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
p.99

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
p.105

Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
p.111

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
p.117

HomeSolid State PhenomenaSolid State Phenomena Vol. 361Demonstration of 800°C SiC MOSFETs for Extreme...

Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications

Abstract:

Silicon Carbide (SiC) enhancement mode MOS electronics offer several benefits for realizing analog, digital and mixed signal electronics, but limitations on gate dielectric reliability has limited the adoption of MOS in high temperature application. In this work, we report GE’s lateral SiC MOSFETs exceeding previously reported temperature capabilities for SiC MOSFETs with experimental results that have shown that >500°C operation of SiC MOSFETS is possible with >400 hours demonstrated at 620°C, and short-term functionality demonstrated to 800°C. The result shows that MOS-based SiC electronics can continue to be a viable choice for circuit implementations at extreme temperatures >600°C.

By email View Pdf

You might also be interested in these eBooks

20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

View Preview

Solid-State Power Devices: Operational Reliability and Parameters' Stability

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 361)

Pages:

111-116

DOI:

https://doi.org/10.4028/p-NpIBY5

Citation:

Cite this paper

Online since:

August 2024

Authors:

Emad Andarawis*, David Shaddock, Tammy Johnson, Shubhodeep Goswami, Reza Ghandi

Keywords:

800°C Electronics, High Temperature SiC MOSFETS, High Temperature Time Dependent Dielectric Breakdown

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] P. G. Neudeck, D. J. Spry, L. Chen, N. F. Prokop and M. J. Krasowski, "Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C," in IEEE Electron Device Letters, vol. 38, no. 8, pp.1082-1085, Aug. 2017.

DOI: 10.1109/LED.2017.2719280

Google Scholar

[2] Neudeck, Philip G., et al. "Year-long 500° C operational demonstration of up-scaled 4H-SiC JFET integrated circuits." Journal of Microelectronics and Electronic Packaging 15.4 (2018): 163-170.

DOI: 10.4071/imaps.729648

Google Scholar

[3] L. Lanni, B. G. Malm, M. Östling and C. -M. Zetterling, "500°C Bipolar Integrated OR/NOR Gate in 4H-SiC," in IEEE Electron Device Letters, vol. 34, no. 9, pp.1091-1093, Sept. 2013.

DOI: 10.1109/led.2013.2272649

Google Scholar

[4] E. Andarawis, C.P. Chen, J. Popp, L. Yin and D. Shaddock "Extended Lifetime Testing of SiC CMOS Electronics at 500°C" IMAPS HiTEN 2022, Oxford, UK July 18-20, 2022.

Google Scholar

[5] K. Matocha and V. Tilak, "Understanding the inversion-layer properties of the 4H-SiC/SiO2 interface," Mater. Sci. Forum, vols. 679–680, p.318–325, Mar. 2011.

DOI: 10.4028/www.scientific.net/msf.679-680.318

Google Scholar

[6] L. C. Yu et al., "Reliability issues of SiC MOSFETs: A technology for high-temperature environments," IEEE Trans. Device Mater. Rel.,vol. 10, no. 4, p.418–426, Dec. (2010)

DOI: 10.1109/tdmr.2010.2077295

Google Scholar

[7] C. -P. Chen, S. Goswami and R. Gossman, "High temperature resilience of deposited films in harsh environment semiconductor devices: Topics/categories: Non-silicon," 2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY, USA, 2022, pp.1-6.

DOI: 10.1109/ASMC54647.2022.9792481

Google Scholar

[8] R. Ghandi, et.al, "Silicon Carbide Integrated Circuits with Stable Operation Over a Wide Temperature Range". IEEE Electron Device Letters, 35(12), 1206–1208, 2014.

DOI: 10.1109/led.2014.2362815

Google Scholar