UIS Ruggedness of Parallel 4H-SiC MOSFETs
p.65
p.65
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
p.71
p.71
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
p.77
p.77
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
p.85
p.85
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
p.93
p.93
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
p.99
p.99
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
p.105
p.105
Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
p.111
p.111
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
p.117
p.117
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Abstract:
Dynamic on-state resistance has been experimentally observed in all commercially-available SiC MOSFETs studied on the time scale of normal device operation, and can be explained by the presence of dynamic threshold-voltage instability. The magnitude of this dynamic on-state resistance varies from vendor to vendor, but in every case this magnitude generally corresponds to the magnitude of that device’s threshold-voltage instability, as described by standard textbook equations-especially in the case of large threshold-voltage instabilities.
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Periodical:
Solid State Phenomena (Volume 361)
Pages:
117-121
Citation:
Online since:
August 2024
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