The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions

Abstract:

In this study, we introduce the impact of gamma irradiation on 4H-SiC based transistor-transistor logic (TTL) inverters. These monolithic bipolar inverters have been successfully demonstrated in a broad spectrum of temperature and supply voltage conditions. In this iteration of experiments, attempts made to the processing to increase beta values. The gamma radiation tests from a ⁶⁰Co source were conducted under various operation conditions and measured in-situ under different biasing conditions. The Silicon Carbide Integrated circuits ( SiC ICs) show excellent tolerance properties to gamma radiation up to doses of nearly 1 MRad. Comparable Si BJT-based TTL inverters show considerable degradation already at one order of magnitude lower doses, clearly demonstrating the superior radiation hardness of 4H-SiC ICs.

• Periodical: Solid State Phenomena (Volume 361)
• Pages: 71-76
• DOI: https://doi.org/10.4028/p-O7afLP
• Online since: August 2024
• Authors: Alex Metreveli*, Anders Hallén, Ilaria di Sarcina, Alessia Cemmi, Adriano Verna, Carl Mikael Zetterling
• Keywords: Bipolar Transistor, Co-60, Critical Regime, Enhanced Dose-Rate Sensitivity, Gamma Radiation, Inverter, TTL

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