High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode

Yunyi Qi; Arne Benjamin Renz; Virendra Kotagama; Marina Antoniou; Peter Michael Gammon

doi:10.4028/p-hytK19

Paper Titles

UIS Ruggedness of Parallel 4H-SiC MOSFETs
p.65

The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
p.71

Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
p.77

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
p.85

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
p.93

High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
p.99

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
p.105

Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
p.111

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
p.117

HomeSolid State PhenomenaSolid State Phenomena Vol. 361High Single-Event Burnout Resistance 1.2 kV 4H-SiC...

High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode

Abstract:

A 1.2 kV lateral RESURF Schottky diode (TZ-SBD) have been designed from SZ-SBD that can recover from a single-event effect (SEE) in which a heavy ion traverses the device at a linear energy transfer (LET) of 60 MeV·cm²/mg, ESA’s standard. Compared to SZ-SBD, TZ-SBD has an additional split in the N-drift region which is usually used to improve the electric field distribution so its breakdown voltage is improved by 9%. During the single events simulations, the maximum temperature is 919 K with reverse voltage (VR) = 1200 V and LET = 60 MeV·cm²/mg, which is much lower then the SiC melting temperature (3100 K) and the chemically unstable temperature of SiC in the presence of metal (1073 K).

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