Paper Titles

Hydrogen-Plasma Treated CVD Amorphous Silicon: Growth and Properties
p.127

Growth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance Plasma
p.135

Diagnostics of High-Rate a-Si:H Deposition in a Variable Frequency Plasma
p.181

Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure
p.195

Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:H
p.227

Luminescence of Porous and Amorphous Hydrogenated Silicon: Analogies and Differences
p.261

Electric Field Dependence of Photoluminescence in a-Si:H
p.275

Visible Light Emission at Room Temperature from PECVD a-SiOx:H
p.283

The Lifetimes of High-Frequency Phonons in Amorphous Silicon: Evidence for Phonon Localization
p.289

HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Plasma Kinetics, Surface Phenomena and Growth...

Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:H

Article Preview

Abstract:

You might also be interested in these eBooks

Hydrogenated Amorphous Silicon

Info:

Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

227-260

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.227

Citation:

Cite this paper

Online since:

July 1995

Authors:

D. Das

Keywords:

Chemical Annealing by Atomic Hydrogen, Growth-Zone, Hydrogen Chemical Potential, Hydrogen Coverage, Interrupted Growth, Nanocrystallisation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: