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Growth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance Plasma
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Diagnostics of High-Rate a-Si:H Deposition in a Variable Frequency Plasma
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Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure
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Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:H
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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Diagnostics of High-Rate a-Si:H Deposition in a...

Diagnostics of High-Rate a-Si:H Deposition in a Variable Frequency Plasma

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

181-194

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.181

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Online since:

July 1995

Authors:

M. Heintze

Keywords:

Electron Density, Excitation Frequency, Growth Rate, Ion Flux, VHF Plasma Deposition

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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