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Paper Titles
Preface
Selected Properties of Hydrogenated Amorphous Silicon and Silicon-Carbon Alloys
p.3
On the Atomic Structure of Amorphous Semiconductors
p.25
Physics of Device Grade Amorphous Silicon
p.41
Very High Frequency Glow Discharge: Plasma- and Deposition Aspects
p.97
Hydrogen-Plasma Treated CVD Amorphous Silicon: Growth and Properties
p.127
Growth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance Plasma
p.135
Diagnostics of High-Rate a-Si:H Deposition in a Variable Frequency Plasma
p.181
Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure
p.195
HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Physics of Device Grade Amorphous Silicon

Physics of Device Grade Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

41-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.41 DOI link

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Online since:

July 1995

Authors:

R.M. Mehra, P.C. Mathur, P. Craig Taylor

Keywords:

Dangling Bond, Doping, Equilibrium, Fermi Level, Hydrogenation, Transport

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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