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Growth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance Plasma
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Diagnostics of High-Rate a-Si:H Deposition in a Variable Frequency Plasma
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Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure
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Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:H
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Luminescence of Porous and Amorphous Hydrogenated Silicon: Analogies and Differences
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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Ellipsometric Studies of a-Si:H Film Growth,...

Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

195-226

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.195

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Online since:

July 1995

Authors:

U.I. Schmidt, T. Haage, B. Schröder

Keywords:

Density Determination, Ellipsometric Data Interpretation, Initial Transient Stage of Discharge, Kinetic Ellipsometry, Laser Light Scattering, Particle Formation, Process Control, Solar Cell Optimisation, Spectroscopic Ellipsometry (SE), Tetrahedron Model

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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