Paper Titles

Preface and Committees

The Rinsing Problem: Effect of Solute-Surface Interactions on Wafer Purity
p.1

Hydrogenated Ultrapure Water Production System for Future Wet Cleaning Process
p.7

Behaviour of Metallic Contaminants during Mos Processing
p.11

Hydrogen Peroxide Decomposition in Ammonia Solutions
p.15

New Aspects of the Diluted Dynamic Clean Process
p.19

Single Step Alkaline Cleaning Solution for Advanced Semiconductor Cleaning
p.23

Particle Removal Efficiency and Silicon Roughness in HF-DIW/O₃/Megasonics Cleaning
p.27

Industrial Trends in Wet Processing Technology
p.31

HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Behaviour of Metallic Contaminants during Mos...

Behaviour of Metallic Contaminants during Mos Processing

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.11

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Online since:

November 1998

Authors:

Twan Bearda, Stefan De Gendt, Lee M. Loewenstein, M. Knotter, Paul W. Mertens, Marc Heyns

Keywords:

Contamination, Diffusion, GOI, Solubility, TXRF, Ultra-Clean Processing

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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