Paper Titles

Behaviour of Metallic Contaminants during Mos Processing
p.11

Hydrogen Peroxide Decomposition in Ammonia Solutions
p.15

New Aspects of the Diluted Dynamic Clean Process
p.19

Single Step Alkaline Cleaning Solution for Advanced Semiconductor Cleaning
p.23

Particle Removal Efficiency and Silicon Roughness in HF-DIW/O₃/Megasonics Cleaning
p.27

Industrial Trends in Wet Processing Technology
p.31

Particle Addition Behaviour of Oxide Stripping by HF Solutions
p.35

The Electrochemical Kinetics of Silicon Surface Corrosion in HF Containing Dilute Solutions
p.39

Influence of the Dissolved Gas in Cleaning Solution on Silicon Wafer Cleaning Efficiency
p.43

HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Particle Removal Efficiency and Silicon Roughness...

Particle Removal Efficiency and Silicon Roughness in HF-DIW/O₃/Megasonics Cleaning

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces IV

Info:

Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.27

Citation:

Cite this paper

Online since:

November 1998

Authors:

Mauro Alessandri, Enrico Bellandi, Francesco Pipia, F. Cazzaniga, K. Wolke, M. Schenkl

Keywords:

HF, Ozone, Removal Efficiency

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: