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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Gas-Phase Surface Processing Prior to 3.2 nm Gate...

Gas-Phase Surface Processing Prior to 3.2 nm Gate Oxidation

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Abstract:

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Ultra Clean Processing of Silicon Surfaces IV

Info:

Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

85-88

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.85

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Online since:

November 1998

Authors:

Jerzy Ruzyllo, Erika Röhr, M. Baeyens, Twan Bearda, Paul W. Mertens, Marc Heyns

Keywords:

Charge-to-Breakdown, Dry Cleaning, Ultra-Thin Oxide

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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