Paper Titles

Deposition of Microcrystalline Silicon Films by Magnetron Sputtering
p.107

Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate
p.113

Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering
p.119

Influence of Deposit Thickness on the Microstructure and Surface Roughness of Silicon Films Deposited from Silane
p.125

Adaptation of Microelectronics Simulator to the Polycrystalline Silicon Technology
p.131

Thickness Control of the Amorphous Buffer Layer of Hydrogenated Nanocrystalline Silicon: Effect of the Dopant Concentration
p.137

Structure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon Films
p.143

Highly Doped Microcrystalline SiGe Films: Structure and Transport Properties
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Photoluminescence Measurements of Microcrystalline Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Adaptation of Microelectronics Simulator to the...

Adaptation of Microelectronics Simulator to the Polycrystalline Silicon Technology

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Abstract:

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Polycrystalline Semiconductors V

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Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

131-136

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.131

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Online since:

April 1999

Authors:

T. Gaillard, H. Lhermite, O. Bonnaud, R. Rogel

Keywords:

Electrical Modeling, Polycrystalline Silicon, Simulation

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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