Paper Titles

Preface, Conference Organisation and Sponsors

Defects and Contamination in Microelectronic Device Production: State-of-the-Art and Prospects
p.1

The Effect of Ion Implantation on the Metal Contamination of Silicon Surfaces in Aqueous Solution
p.7

Barium, Strontium and Bismuth Contamination in CMOS Processes
p.9

An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor
p.15

Chemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate Stacks
p.19

Wettability Modification of Polysilicon for Stiction Reduction in Silicon Based Micro-electromechanical Structures
p.23

Dual Gate Oxide for 0.18μm Technologies and Below: Optimization of the Wet Processing Sequence
p.27

New Aqueous Clean for Aluminum Interconnects: Part I. Fundamentals
p.31

HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Defects and Contamination in Microelectronic...

Defects and Contamination in Microelectronic Device Production: State-of-the-Art and Prospects

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Ultra Clean Processing of Silicon Surfaces V

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

1-6

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.1

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Online since:

January 2001

Authors:

Bernd O. Kolbesen, Hans Cerva, G. Zoth

Keywords:

Dislocation, DRAMs, Electrical Failures, Extended Crystalline Defects, Material Specifications, Metal Contamination, Metal Precipitates, Physical Analysis, Process Chemicals, Process Optimisation, Stacking Fault, TEM, Trenches, Tungsten Wormholes, Vertical Bird's Beak

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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