An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor

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Periodical:

Solid State Phenomena (Volumes 76-77)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

15-18

DOI:

10.4028/www.scientific.net/SSP.76-77.15

Citation:

K. T. Lee et al., "An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor", Solid State Phenomena, Vols. 76-77, pp. 15-18, 2001

Online since:

January 2001

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$35.00

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