Dual Gate Oxide for 0.18μm Technologies and Below: Optimization of the Wet Processing Sequence

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Periodical:

Solid State Phenomena (Volumes 76-77)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

27-30

DOI:

10.4028/www.scientific.net/SSP.76-77.27

Citation:

D. Lévy et al., "Dual Gate Oxide for 0.18μm Technologies and Below: Optimization of the Wet Processing Sequence", Solid State Phenomena, Vols. 76-77, pp. 27-30, 2001

Online since:

January 2001

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$35.00

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