Paper Titles

Forced Vapour-Phase Decomposition (FVPD) in Combination with e.g. TXRF - a Method to Determine Contamination in Silicon
p.171

On-Tool Real-Time Moisture Monitoring Provides Yield and Productivity Benefits
p.175

Effect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) Surfaces
p.179

Thermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR Spectroscopy
p.183

Modelling the Growth of Chemical Oxide for Advanced Surface Preparation
p.187

Wafer Surface Preparation Requirements for Next-Generation Devices
p.191

Cleaning of Si Surfaces by Lamp Illumination
p.195

Defect-Free Si Thinning by In Situ HCI Vapour Etching
p.199

Advanced Cylindrical Capacitor Formation Using Gas-Phase Selective Etching
p.203

HomeSolid State PhenomenaSolid State Phenomena Vol. 92Modelling the Growth of Chemical Oxide for...

Modelling the Growth of Chemical Oxide for Advanced Surface Preparation

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces VI

Info:

Periodical:

Solid State Phenomena (Volume 92)

Pages:

187-190

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.187

Citation:

Cite this paper

Online since:

May 2003

Authors:

Sébastien Petitdidier, Névine Rochat, R. Rouchon, Pascal Besson

Keywords:

Diffusion, IR, Kinetic, Ozonized Mixtures, Peroxide Mixtures, Silicon Oxidation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: