Defect-Free Si Thinning by In Situ HCI Vapour Etching

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Periodical:

Solid State Phenomena (Volume 92)

Edited by:

Marc Heyns, Paul Mertens and Marc Meuris

Pages:

199-202

DOI:

10.4028/www.scientific.net/SSP.92.199

Citation:

R. Loo et al., "Defect-Free Si Thinning by In Situ HCI Vapour Etching", Solid State Phenomena, Vol. 92, pp. 199-202, 2003

Online since:

May 2003

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$35.00

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