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Thermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR Spectroscopy
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Modelling the Growth of Chemical Oxide for Advanced Surface Preparation
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Wafer Surface Preparation Requirements for Next-Generation Devices
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Cleaning of Si Surfaces by Lamp Illumination
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HomeSolid State PhenomenaSolid State Phenomena Vol. 92Wafer Surface Preparation Requirements for...

Wafer Surface Preparation Requirements for Next-Generation Devices

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Ultra Clean Processing of Silicon Surfaces VI

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

191-194

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.191

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Online since:

May 2003

Authors:

Ismail Kashkoush, G. Chen, R. Novak

Keywords:

Chemical Injection, Etch Uniformity, HF-Last, Ozone, Surface Contamination, Wafer Cleaning

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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