A Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF Analysis

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Periodical:

Solid State Phenomena (Volume 92)

Edited by:

Marc Heyns, Paul Mertens and Marc Meuris

Pages:

89-92

DOI:

10.4028/www.scientific.net/SSP.92.89

Citation:

B. Beckhoff et al., "A Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF Analysis", Solid State Phenomena, Vol. 92, pp. 89-92, 2003

Online since:

May 2003

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$35.00

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