Books by Keyword: Defect

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 226-228) and the end of July 2005 (journal availability permitting).

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 218-220) and the end of April 2004 (journal availability permitting).

Description: There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.

Description: In addition to the usual abstracts of research reported since the previous retrospective, this issue comprises ten invited papers. The first four are reviews that cover the important topics of conductive oxide preparation, the modeling of amorphous materials (silicon carbide, for example), the nanoscale characterization of oxides and the effect of combined irradiation treatments.
The other six invited papers present recent experimental or theoretical studies of structural defects in gallium nitride, atomic-scale deformation processes in nanomaterials, micropipes in silicon carbide, radiation effects in garnets and boron diffusion in hafnia.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.