Books by Keyword: Defect

Description: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Description: The characterisation of semiconductors is of key importance in preparing and applying semiconductors in industry.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The present work deals with theoretical and experimental topics which are related to the assessment of microstructures in semiconductors by means of beam injection and related methods.

Description: When it comes to studying the structures and defects of materials, there is presently no technique that is superior to positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present book relates the newest and most important scientific discoveries made in the field of positron annihilation.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This latest annual look back at the subject includes review papers on some applications of mechanical spectroscopy and magnetic relaxation to the monitoring of diffusion, on the effect of positron diffusion upon their annihilation, on the wind force in electromigration, on the creep of nanocrystalline metals (as related to grain-boundary diffusion) and on self-interstitial atom behaviour at high temperatures in dense metals.

Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).