Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
Engineering Chemistry
Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
Materials Science Forum
Nano Hybrids and Composites
Solid State Phenomena
Engineering Series
Advances in Science and Technology
Construction Technologies and Architecture
Engineering Headway
Books by Keyword: Defect
Books
Edited by:
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Online since: November 2008
Description: The purpose of this special volume was to provide an international forum within which to present the recent progress made in positron and positronium chemistry, and to exchange new ideas in fields of research which use positrons and positronium.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by:
Dr. David J. Fisher
Online since: November 2008
Description: This tenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective IX (Volume 268).
Edited by:
Akira Suzuki, Hajime Okumura, Prof. Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Dr. Shin-ichi Nishizawa
Online since: September 2008
Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by:
Veena Tikare, Prof. Graeme E. Murch, Frederic Soisson and Jeung Ku Kang
Online since: April 2008
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
No present-day research and development program is complete without the inclusion of a robust modeling and numerical simulation component. Models and model-based numerical simulations are extensively used to probe complex materials behavior and structure in order to obtain a deeper insight into the fundamentals of materials. Multi-physics models are becoming increasingly common, with advances in computational science, and are rapidly advancing the basic understanding of materials.
No present-day research and development program is complete without the inclusion of a robust modeling and numerical simulation component. Models and model-based numerical simulations are extensively used to probe complex materials behavior and structure in order to obtain a deeper insight into the fundamentals of materials. Multi-physics models are becoming increasingly common, with advances in computational science, and are rapidly advancing the basic understanding of materials.
Edited by:
John Bell, Cheng Yan, Lin Ye and Liangchi Zhang
Online since: February 2008
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This special issue aims to provide up-to-date knowledge and the latest scientific concepts and technological developments in the processing, characterization, testing, mechanics, modeling and applications of a broad range of advanced materials.
This special issue aims to provide up-to-date knowledge and the latest scientific concepts and technological developments in the processing, characterization, testing, mechanics, modeling and applications of a broad range of advanced materials.
Edited by:
Prof. Rafał Leszek Abdank-Kozubski, Prof. Graeme E. Murch and Paweł Zięba
Online since: November 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The inspiration for this book was to gather together the efforts of those physicists, materials scientists/engineers and other scientists who are carrying out interdisciplinary research into multiscale modelling of time-evolving phenomena in materials.
The inspiration for this book was to gather together the efforts of those physicists, materials scientists/engineers and other scientists who are carrying out interdisciplinary research into multiscale modelling of time-evolving phenomena in materials.
Edited by:
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Online since: October 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Edited by:
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Online since: October 2006
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Edited by:
Dr. David J. Fisher
Online since: March 2006
Description: This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 242-244) and the end of June 2006 (journal availability permitting).
Edited by:
Bernard Pichaud, A. Claverie, Prof. Daniel Alquier, Hans Richter and Martin Kittler
Online since: December 2005
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.