Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Defect and Diffusion Forum Vols. 148-149

Edited by: Dr. David J. Fisher

Online since: March 1997

Description: Journal issue

Defects in Insulating Materials

Edited by: G.E. Matthews and R.T. Williams

Online since: January 1997

Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Defect and Diffusion Forum Vols. 134-135

Edited by: Dr. David J. Fisher

Online since: March 1996

Description: Journal issue

Defect and Diffusion Forum Vols. 131-132

Edited by: Graeme E. Murch

Online since: March 1996

Description: Journal issue

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Defect and Diffusion Forum Vols. 125-126

Edited by: Graeme E. Murch

Online since: March 1995

Description: Journal issue

Positron Annihilation - ICPA-10

Edited by: Yuan-Jin He, Bi-Song Cao and Y.C. Jean

Online since: November 1994

Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.

Physical Chemistry of Solid State Materials

Edited by: M. Zahir

Online since: September 1994

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book presents most recent advances in the physical chemistry of solid state materials. The range of topics covers various methods of preparing solid state materials, their physical properties as well as industrial applications.

Quasicrystals and Imperfectly Ordered Crystals

Edited by: K.H. Kuo and S. Takeuchi

Online since: January 1994

Description: In 1994 we will mark the tenth anniversary of the discovery of quasicrystals, aperiodic crystals which lie outside the framework of traditional crystallography and which have disturbed the theory and practice of solid state physics, bringing in new perspectives. Already a substantial international community working on this topic has developed, with its own social structure, and it is time to assess the progress of the past decade and to consider future possibilities.