Books by Keyword: Defect

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: The volume contains conference papers on selected contributions presented at the OMEE-2012 Conference.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers are grouped into the following chapters:
Technology of the active media for electronic engineering;
Active media fundamentals: crystal structure, micro- and nanostructure, electronic structure;
Nanoparticles, nano-ceramics and nano-composites;
Materials for quantum and optoelectronics, defects, impurities and transport phenomena;
Magnetic properties, superconductivity and applications;
Materials for sensing.

Description: These proceedings, comprising 66 peer-review papers, are divided into 10 chapters covering: fundamental aspects (of positron and positronium chemistry), membranes, molecular systems, confined systems, liquids, polymers, porous systems, non-metallic materials, nuclear materials, experimental techniques. This work owes a lot to the authors’ commitment to positron and positronium chemistry and related subjects.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: These are the proceedings of the 2012 International Meeting on Opto-Electronics Engineering and Materials Research (OEMR2012). The 149 peer-reviewed papers are grouped into 2 chapters: 1 - Materials Science and 2 - Opto-Electronics Engineering.

Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
The motivation for this special-topic volume was two-fold. Among the various techniques for probing material properties at the atomic scale, PAC is a somewhat hidden gem. This is partly because PAC requires the use of radioisotopes; thus rendering it almost useless as a non-destructive characterization method. Moreover, there are relatively few PAC isotopes available; so it is not always possible to apply PAC to the most technologically pressing problems. Thus, PAC studies of materials are often more fundamental, and less applied, in nature. One of the goals of this volume was to raise the profile of PAC: in particular, for materials scientists, whose research could well benefit from adding this method to their tool-box. The second goal was to provide a single-source reference which illustrated the applicability of PAC to a wide range of materials. Part 1 consists of a number of comprehensive review articles concerning the technique itself and its state-of-the-art application to magnetic materials, ceramic oxides and nanostructured materials. Part 2 consists of papers which describe ongoing work on TiO2 nanomaterials, L12-structured intermetallic compounds, and wide-bandgap semiconductors. Overall, this is a valuable and unique guide to the subject.

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.