Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
Engineering Chemistry
Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
Materials Science Forum
Nano Hybrids and Composites
Solid State Phenomena
Engineering Series
Advances in Science and Technology
Construction Technologies and Architecture
Engineering Headway
Books by Keyword: Dislocation
Books
Edited by:
Dr. David J. Fisher
Online since: November 2004
Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).
Edited by:
Dr. David J. Fisher
Online since: September 2004
Description: This seven-year retrospective covers the significant results, reported in these fields during that time, and includes abstracts of papers which appeared after the publication of Defect and Diffusion Forum, Volumes 150-151 and Volumes 181-182, (which were last to cover these topics systematically) and the end of August 2004 (allowing for vagaries of journal availability).
Edited by:
Roland Madar, Jean Camassel and Elisabeth Blanquet
Online since: June 2004
Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by:
Dr. David J. Fisher
Online since: December 2003
Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003.
Edited by:
H. Richter and M. Kittler
Online since: September 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Edited by:
A.R. Yavari, A. Inoue, D. Morris and R. Schulz
Online since: May 2003
Description: This volume is available electronically only. Please consult http://www.scientific.net/jmnm
Edited by:
L.B. Magalas
Online since: February 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book comprises the proceedings of the Second International School on Mechanical Spectroscopy; presented here as invited lectures (Part I) and contributed papers (Part II). After having originated merely as a technique for the study of internal friction, mechanical spectroscopy has developed strongly, during the past decade, into a tool which is now indispensable for making advances in the creation of new materials. This book will therefore provide an excellent reference source for every researcher working in the field.
This book comprises the proceedings of the Second International School on Mechanical Spectroscopy; presented here as invited lectures (Part I) and contributed papers (Part II). After having originated merely as a technique for the study of internal friction, mechanical spectroscopy has developed strongly, during the past decade, into a tool which is now indispensable for making advances in the creation of new materials. This book will therefore provide an excellent reference source for every researcher working in the field.
Edited by:
C.-h. Chiu, Z. Chen, H. Gao, K.Y. Lam, A.A.O. Tay
Online since: August 2002
Description: This book contains the proceedings of Symposium L of the International Conference on Materials for Advanced Technologies, held from the 1st to the 6th of July , 2001 in Singapore. The aim of this important meeting was to bring together researchers and engineers having very different backgrounds, and thus promote free discussion and the exchange of ideas across many interdisciplinary boundaries.
Edited by:
P. Klimanek, A.E. Romanov, B.M. Seefeldt
Online since: February 2002
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The last few years have witnessed a rapidly growing interest in the explanation and interpretation of the mesoscale microstructures which occur in distorted crystalline objects such as, for instance, conventional plastically deformed metals and alloys, as well as high-performance materials including ultra-fine grained polycrystals, nanocrystals and thin films.
The last few years have witnessed a rapidly growing interest in the explanation and interpretation of the mesoscale microstructures which occur in distorted crystalline objects such as, for instance, conventional plastically deformed metals and alloys, as well as high-performance materials including ultra-fine grained polycrystals, nanocrystals and thin films.
Edited by:
S. Pizzini
Online since: December 2001
Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.