Books by Keyword: Dislocation

Description: This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Description: Volume is indexed by Thomson Reuters BCI (WoS).
Bulk nanostructured (NS) materials have emerged as a new class of materials having unusual structures and properties. As a result, they have attracted considerable attention in recent years. Bulk NS materials are single or multi-phase polycrystals with a nanoscale grain size and can usually be classified into nanocrystalline (<100nm) and ultrafine grain (<1000nm) materials. This book contains important papers on the mechanical properties and deformation mechanisms of bulk NS materials. The advanced properties include strength, ductility, strain-hardening, fatigue, dynamic, creep and toughness, etc. These properties are important for the ultimate structural applications of bulk NS materials. The mechanical properties of these materials are determined by their specific deformation mechanisms (such as boundary-dominated deformation) due to the very small grain size in comparison with coarse-grained counterparts. The 20 invited papers is divided between two chapters: I. Advanced Mechanical Properties of Nanostructured Materials - II. Deformation Mechanisms of Bulk Nanostructured Materials. This work should be read by all of those wishing to improve mechanical properties without having to consider entirely new alloys.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: The main goal of these proceedings was to demonstrate the use of a variety of multi-scale approaches, ranging from the atomistic to the macroscopic, and in this it succeeds admirably. The special collection includes more than 130 peer-reviewed papers on atomistic, mesoscopic, macroscopic and multiscale approaches.

Description: The 26 peer-reviewed papers collected here together offer a plenitude of up-to-date information on “Materials Challenges for Future Nuclear Fission and Fusion Technologies”. The papers are conveniently arranged into MATERIALS CHALLENGES FOR FUTURE NUCLEAR FISSION AND FUSION TECHNOLOGIES, Low Activation Structural Materials for Nuclear Fusion Systems, Functional, Cladding and Fuel Materials for Nuclear Fission Reactors, Radiation Effects, MATERIALS TECHNOLOGY FOR NUCLEAR WASTE TREATMENT AND DISPOSAL.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
Strength and ductility are two of the most important mechanical properties of structural materials, but this usually involves a trade-off, because of the fundamental inverse proportionality of these two features. Since the 1980s, bulk nanostructured materials have emerged as a new class of material having unusual structures and, as a result, have attracted increasing attention. Unfortunately, most bulk nanostructured materials still do not evade the strength-ductility trade-off dilemma, and usually have very poor ductility. The poor ductility of bulk nanostructured materials has indeed become a seemingly insurmountable obstacle to the widespread technological application of structural bulk nanostructured materials.

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.

Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.