Books by Keyword: Dislocation

Description: Nanostructured materials, in which the structural features (e.g., grains and/or domains separated by low-angle grain boundaries) are smaller than 100nm in at least one dimension, have attracted worldwide research interest for more than a decade because of their unique properties. For example, the combination of high strength with high ductility has been reported for some nanostructured metals and alloys: this is a rare, if not impossible, combination of mechanical properties for coarse-grained metals and alloys. Among the many techniques available for producing nanostructured materials, severe plastic deformation (SPD) is the most popular and most rapidly developing one.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The principal purpose of assembling this special volume was to create a truly international body of peer-reviewed contributions on “Interaction between defects and anelastic phenomena in solids”.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The objective of this collection was to gather together the latest information on the mechanical behavior of materials. The volumes cover the progress made in all aspects of the mechanical behavior of materials, seen from both the macroscopic and microscopic viewpoints.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This edited collection of 240 peer-reviewed articles covers a broad range of topics dealing with plasticity in various materials, such as metals, composites, polymers, foams, soils, and rocks at the nano-, micro- and macro-scales. These informative papers will bring the reader fully up-to-date with the latest research efforts advancing on a broad range of fronts in engineering plasticity

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Description: This work bridges the gaps between mechanical spectroscopy, internal friction, relaxation phenomena in solids and the spectroscopic approach to the dissipation of mechanical energy in solids.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
A limited number of papers are selected from different fields in order to compare the analysis of similar relaxation phenomena occurring in various materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.

Description: This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains papers selected from the more than 120 contributions presented during the 4th international conference on “Materials Structure & Micromechanics of Fracture (MSMF-4)”, in Brno, Czech Republic, June 23-25, 2004.