Books by Keyword: Dislocation

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
X-ray powder diffraction is a non-destructive technique widely applied for the characterisation of crystalline materials. The method has been traditionally used for phase identification, quantitative analysis and the determination of structure imperfections. In recent years, applications have been extended to new areas, such as the determination of crystal structures and the extraction of three-dimensional microstructural properties.

Description: The characterisation of semiconductors is of key importance in preparing and applying semiconductors in industry.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The present work deals with theoretical and experimental topics which are related to the assessment of microstructures in semiconductors by means of beam injection and related methods.

Description: This latest annual look back at the subject includes review papers on some applications of mechanical spectroscopy and magnetic relaxation to the monitoring of diffusion, on the effect of positron diffusion upon their annihilation, on the wind force in electromigration, on the creep of nanocrystalline metals (as related to grain-boundary diffusion) and on self-interstitial atom behaviour at high temperatures in dense metals.

Description: This is the third special issue to cover recent progress in the field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies; although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. As before, the usual definition of ‘ceramic’ has been widened so as to include all forms of carbon, and also some nitrides whose primary use is not that of a classical ceramic.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
From the early industrial revolution, metal working has been the major driving force for the development of many manufacturing technologies. “Advances in Engineering Plasticity” reports on recent developments in the field of metal forming and plasticity research from both the fundamental science and industrial application perspective.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Recent research on the creep and fracture of engineering materials is presented, with particular emphasis being placed on: mechanisms of high-temperature deformation and fracture, materials for high-temperature service, the behavior of single and polycrystals, components and structures, grain boundaries and interfaces, and superplasticity.

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: This volume is available electronically only. Please consult http://www.scientific.net

Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.