Description: The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

Theoretical and Technological Aspects of Crystal Growth

Edited by: R. Fornari and C. Paorici

Online since: March 1998

Description: The present publication comprises the proceedings of the 10th International Summer School on Crystal Growth. It is an excellent introduction to the main features of the science and technology of crystal growth.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Silicon Carbide, III-Nitrides and Related Materials

Edited by: G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Online since: February 1998

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.

Defects in Semiconductors 19

Edited by: Gordon Davies and Maria Helena Nazaré

Online since: December 1997

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Structure Development in Condensed Matter

Edited by: J. Lendvai

Online since: August 1997

Description: Many important properties of materials are governed by the microstructures which have evolved during their prior treatment. Therefore, the characterisation of structures and the understanding of structural changes has always been a central problem in any discipline which deals with materials.

Gettering and Defect Engineering in Semiconductor Technology VII

Edited by: C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Online since: July 1997

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Defect and Diffusion Forum Vol. 152

Edited by: Dr. David J. Fisher

Online since: March 1997

Description: Journal issue

Defect and Diffusion Forum Vols. 148-149

Edited by: Dr. David J. Fisher

Online since: March 1997

Description: Journal issue

Polycrystalline Semiconductors IV

Edited by: S. Pizzini, H.P. Strunk and J.H. Werner

Online since: May 1996

Description: The present volume covers many aspects of semiconductors, over the wide structural range from nano- to large-grained crystalline. Scientists working on polycrystalline semiconductors, with various chemistries, here review fundamental research, technology and applications.

Nondestructive Characterization of Materials VII

Edited by: Anthony L. Bartos, Robert E. Green, Jr. and Clayton O. Ruud

Online since: May 1996

Description: The role of non-destructive evaluation is changing dramatically, and it has already expanded beyond its historical mission of detecting macroscopic defects in structures and in finished components which had usually spent a considerable time in service.