Description: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices
-Metastability in Semiconductor Strained-Layer Structures
-The Morphology of MOCVD-Grown Semiconductor Multilayers
-Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures
-Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability
-The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices
-Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems
-II-VI Strained-Layer Semiconductor Superlattices

Gallium Arsenide III

Authors: P. Kordos

Online since: January 1989

Description:

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.

Ion Implantation in Semiconductors

Edited by: D. Stievenard and J.C. Bourgoin

Online since: January 1988

Description: The volume presents approximately 30 invited contributions.

Defect and Diffusion Forum Vol. 30

Edited by: Fred H. Wohlbier and Dr. David J. Fisher

Online since: January 1982

Description: Defect and Diffusion Forum Vol. 30