Books by Keyword: Ion Implantation

Description: This publication bears witness of a renewal of the studies on dislocations. The texts of the lectures as well as those of the contributions illustrate, indeed, the wide spectrum of the present concerns. The openings towards physics, mechanics, even electrochemistry or geology, the new experimental approaches will certainly benefit to the investigation of new materials and complex situations.

Description: The book introduces a new scientific ideology for known phenomena, and the authors show how some results of radiation physics of semiconductors, for example processes of disordering and amorphization, can be considered from a synergetics point of view, and how one can apply these concepts and mathematical tools to derive completely new insights.

Description: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices
-Metastability in Semiconductor Strained-Layer Structures
-The Morphology of MOCVD-Grown Semiconductor Multilayers
-Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures
-Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability
-The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices
-Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems
-II-VI Strained-Layer Semiconductor Superlattices

Description:

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.

Description: The volume presents approximately 30 invited contributions.

Description: Defect and Diffusion Forum Vol. 30