Books by Keyword: Ion Implantation

Description: The development of solid-state semiconductor structures is at the forefront of technological innovation, driving advancements across various applications of microelectronics and high-power devices. The formation and processing of semiconductor solid-state structures involve a series of sophisticated and precision technologies that improve functionality and provide integration of finished components into complex circuits. This special edition is an essential resource for engineers and researchers involved in developing and applying semiconductor technologies.

Description: The processing and properties analysis of semiconductor structures are standing at the cutting edge of technological innovation, propelling advancements in the production of solid-state electronics. These technologies require a range of sophisticated and precise operations and are crucial in modifying materials to achieve the desired electrical characteristics of completed structures. The presented special edition will be an invaluable resource for engineers and researchers involved in the development in the area of semiconductor technologies.

Description: The special edition includes articles that represented the latest research results and engineering solutions in the area of electronic device design and production. This special edition will be interesting to specialists in semiconductor power device production, microelectronics and optoelectronics.

Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Description:

The 72nd volume of the "Journal of Nano Research" has been collected from the peer-reviewed articles reflecting the practical research results in the synthesis and properties analysis of nanomaterials and nanostructures for various cases of industrial applications. The research results will find practical use in micro- and optoelectronics, chemical production, technologies of membrane water desalination, and water treatment by the photocatalytic degradation of pollutants, intensification of plant growth, and packaging of agricultural products.

Description:

This issue from the topic series “Corrosion” contains articles published by Trans Tech Publications in 2017 - 2020. The volume covers many aspects of the corrosive behaviour of metallic biomaterials - from corrosion resistance studies to biocompatible coatings. We hope this collection will be useful and interesting to a broad audience of researchers and engineers from the area of development and research properties of metallic biomaterials and practitioners who utilize implantable and non-implantable devices.

Description: This volume contains selected papers from the 12^th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.

Description:

This volume is focused on the materials and devices for solar-to-chemical energy conversion. The introductory paper, by Alim and Bak, considers the basic concepts of the light-induced water oxidation by oxide semiconductors. This paper is concentrated on the photoreactivity of metal oxides, such as TiO₂, with water and the related charge transfer during partial and total oxidation. The second paper of Yang et al provides an overview on the performance of TiO₂ as photoanode in photoelectrochemical water oxidation. The paper of Nasir et al considers application of BiVO₄ as photoelectrode for the generation of solar hydrogen fuel using water as the raw material. The work of Pastuovic et al is a treatise on the application of accelerator-based nuclear techniques in the characterisation of oxide semiconductors for solar energy conversion. This volume is addressed to those interested in the progress of research in oxide materials for solar energy conversion.

Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.