Books by Keyword: Ion Implantation

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: The 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) was held at the Congress Center, Nürnberg (CCN), Germany from October 11 to 16, 2009. This was a truly important and exciting event in the history of wide-bandgap semiconductors, as 503 scientists and engineers from 29 countries reported and discussed the progress made during the previous two years.

Description: This eleventh volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective X (Volumes 280-281). As well as the 589 ceramics abstracts, the issue includes original papers on all of the major material groups, and theory: “Positron Annihilation in Ion-Implanted ZnO” (A.D.Acharya, G.Singh and S.B.Shrivastava), “Optical Characteristics of Tungsten Oxide Thin Films Prepared by Sputtering Technique” (S.A.Aly), “Research on Magnetization Mechanism of Nano-Magnetic Fluid” (J.Li and D.Li), “Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing” (O.Velichko and O.Burunova), “Effect of Current Density on Composition and Microstructure of Si Diffusion Layer by Electrodeposition” (H.Yang, Y.Zhang, Y.Li, G.Tang and K.Jia), “Positron Annihilation & Micro-Hardness Measurement of 6063 and 6066 with Compromise with Ingot Al” (M.A.Abdel-Rahman, A.Al-deen and E.A.Badawi), “Stress-Induced Migration and Trapping of Hydrogen in AISI403 Steel” (G.P.Tiwari, V.D.Alur and E.Ramadasan), “Electromigration Force on a Proton with a Bound State” (A.Lodder).

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Diffusion is always central to many scientific and technological fields. From the recognition of Fick´s laws, up to the present day, there have been very important diffusion-based contributions made to fields such as biology, nanosciences, chemistry, physics, etc.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.

Description: This tenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective IX (Volume 268).

Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed