Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Materials Science Applications of Ion Beam Techniques

Edited by: A.G. Balogh and G. Walter

Online since: May 1997

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Defect and Diffusion Forum Vol. 152

Edited by: Dr. David J. Fisher

Online since: March 1997

Description: Journal issue

Defects in Insulating Materials

Edited by: G.E. Matthews and R.T. Williams

Online since: January 1997

Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Defect and Diffusion Forum Vols. 117-118

Edited by: Dr. David J. Fisher

Online since: January 1995

Description: Journal Issue

Defect and Diffusion Forum Vols. 115-116

Edited by: Dr. David J. Fisher

Online since: January 1994

Description: Journal Issue

Defects in Semiconductors 17

Edited by: Helmut Heinrich and Wolfgang Jantsch

Online since: October 1993

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

Dislocations '93

Edited by: J. Rabier, A. George, Y. Bréchet and L. Kubin

Online since: September 1993

Description: This publication bears witness of a renewal of the studies on dislocations. The texts of the lectures as well as those of the contributions illustrate, indeed, the wide spectrum of the present concerns. The openings towards physics, mechanics, even electrochemistry or geology, the new experimental approaches will certainly benefit to the investigation of new materials and complex situations.

Chaos and Stability in Defect Processes in Semiconductors

Edited by: I.V. Verner, N.N. Gerasimenko and J.W. Corbett

Online since: January 1992

Description: The book introduces a new scientific ideology for known phenomena, and the authors show how some results of radiation physics of semiconductors, for example processes of disordering and amorphization, can be considered from a synergetics point of view, and how one can apply these concepts and mathematical tools to derive completely new insights.