Engineering Research
Materials Science
Engineering Series
Books by Keyword: Silicon
Books
The first book of the Proceedings of ASCO-Nanomat 2015 includes articles of 41 contributed papers of the third school-conference, which were recommended for publication by Publishing Committee. The articles reflect the new results and scientific achievements in the field of growth and synthesis of new nanomaterials and coatings, technology of their growth and preparation, their physical properties, calculations and modeling of the electronic structure and properties of new nanomaterials. The Proceedings consist of two chapters. In the first one “Semiconducting and Metal Nanoheterostructures: Self-Organization and Characterization” the 14-th articles devoted to atomic processes and nanostructure formation and characterization and ab initio calculations and modeling were collected. In the second chapter named “Nonlinear Optical Mediums, Nanocomposites, Nanostructured Coatings, Functional Materials and their Applications” the 27 articles devoted to formation technology and characterization of different kinds of nanomaterials of organic and non-organic nature were presented. This proceedings volume is intended for scientists, readers, professors and post-graduate students.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization;
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
The papers are grouped as follows:
Chapter 1: Advanced Technologies in Materials Science and Chemical Engineering;
Chapter 2: Biochemistry and Microbiology;
Chapter 3: Geotechnical Engineering;
Chapter 4: Applied Mechanics and Advances in Mechanical Engineering;
Chapter 5: Power Engineering;
Chapter 6: Technologies of Control and Measurement. Industrial Electronics;
Chapter 7: Networks and Information Technologies. Applied Methods of Computing;
Chapter 8: Engineering Management and Environmental Engineering.
This work reflects the wide and fascinating range of fields to which positrons have made important contributions. This covers, in particular, the development of low-energy (eV-keV) beams of essentially mono-energetic positrons, in the late 1960s, which opened the door to an even wider range of fundamental and technological studies: from surface physics to polymer films. In her introduction Professor Ganguly offers some background knowledge on the extent to which positrons have influenced and contributed to work in numerous fields.
These are the proceedings of the International Conference on Nanotechnology Technology and Advanced Materials (ICNTAM 2012), held on 12-13th April 2012 in Hong Kong. They are divided into three sections. The first deals with Nanotechnology Technology. The second covers materials science and the third treats the use of manufacturing technology.