Books by Keyword: Silicon

Description: This eleventh volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective X (Volumes 280-281). As well as the 589 ceramics abstracts, the issue includes original papers on all of the major material groups, and theory: “Positron Annihilation in Ion-Implanted ZnO” (A.D.Acharya, G.Singh and S.B.Shrivastava), “Optical Characteristics of Tungsten Oxide Thin Films Prepared by Sputtering Technique” (S.A.Aly), “Research on Magnetization Mechanism of Nano-Magnetic Fluid” (J.Li and D.Li), “Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing” (O.Velichko and O.Burunova), “Effect of Current Density on Composition and Microstructure of Si Diffusion Layer by Electrodeposition” (H.Yang, Y.Zhang, Y.Li, G.Tang and K.Jia), “Positron Annihilation & Micro-Hardness Measurement of 6063 and 6066 with Compromise with Ingot Al” (M.A.Abdel-Rahman, A.Al-deen and E.A.Badawi), “Stress-Induced Migration and Trapping of Hydrogen in AISI403 Steel” (G.P.Tiwari, V.D.Alur and E.Ramadasan), “Electromigration Force on a Proton with a Bound State” (A.Lodder).

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Diffusion is always central to many scientific and technological fields. From the recognition of Fick´s laws, up to the present day, there have been very important diffusion-based contributions made to fields such as biology, nanosciences, chemistry, physics, etc.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This special collection of 44 peer-reviewed papers has, as its main focus, advanced materials science and technology, with the emphasis on nanostructured materials and nanostructures.

Description: This special edition compromises a selection of papers presented at the International Conference on Thin Films and Porous Materials (ICTFPM 2008). The main goal of the volume is to report the most recent scientific findings, and to highlight current challenges and opportunities in the promising field of porous materials and thin films.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Abrasive technology concerns manufacturing processes that involve the use of abrasives in various forms. It has a long history; originating right from the first discovery of minerals. With increasingly stringent requirements for the production of high-precision and high surface-quality components, in applications such as silicon wafers for the semiconductor industry and optical lenses for the precision instrument industry, abrasive technology is becoming an increasingly important factor in precision manufacturing. An understanding of the mechanisms of abrasive technology ensures the soundness and integrity of current component manufacture, as well as leading to the development of new and effective techniques.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.

Description: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.