Books by Keyword: Silicon

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 242-244) and the end of June 2006 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection presents, and analyses, the new ideas in the emerging technologies involved in the production and use of particle beams and plasmas.

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 226-228) and the end of July 2005 (journal availability permitting).

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This volume is aimed at diffusion non-specialists who may find at some time that they need a handy guide to the tracer diffusional behaviour of one element in another element. Those working on new coating, or other commercial processes, might for example need basic diffusion data in order to decide on the initial settings of the new-process parameters. Theoreticians who are seeking empirical trends in diffusivities may also find the contents to be of great interest.
The information is presented in the form of abstracts, gathered mainly from the 241-volume series of Defect and Diffusion Forum (and its antecedents); with their coverage of 38 years of diffusion research up to 2004. In the case of certain elements, such as silicon, even earlier data are included.

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book considers many of the various aspects of ceramics interfaces from a gamut of viewpoints. The aim has been to bring together a wide range of specialists in this field, and this approach enables the reader to grasp quickly and fully the present level of understanding and to appreciate the problems which remain in the various research efforts pertinent to ceramic interfaces. Furthermore, it facilitates the mapping out of the direction of future research in these fields, which are much too complex to be covered by a single scientific discipline.

Description: This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).