Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Materials Science Applications of Ion Beam Techniques

Edited by: A.G. Balogh and G. Walter

Online since: May 1997

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Defect and Diffusion Forum Vols. 148-149

Edited by: Dr. David J. Fisher

Online since: March 1997

Description: Journal issue

Diffusion in Materials DIMAT 1996

Edited by: Helmut Mehrer, Christian Herzig, N.A. Stolwijk and Hartmut Bracht

Online since: January 1997

Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.

Cluster Assembled Materials

Edited by: Klaus Sattler

Online since: November 1996

Description: It is now some 15 years since atomic clusters were first produced and investigated in laboratories. Since then, knowledge concerning clusters has enjoyed rapid and sustained growth, and cluster research has become a new branch of science.

Defect and Diffusion Forum Vols. 136-137

Edited by: Dr. David J. Fisher

Online since: March 1996

Description: Journal issue

Defect and Diffusion Forum Vols. 131-132

Edited by: Graeme E. Murch

Online since: March 1996

Description: Journal issue

Intergranular and Interphase Boundaries in Materials II

Edited by: A.C. Ferro, J.P. Conde and M.A. Fortes

Online since: February 1996

Description: This publication focuses on the structural and chemical characterization of interfaces and their kinetic, mechanical and electrical properties. The size of the volume, consisting of almost 200 papers and over 900 pages, reflects the great current interest in the field.

Advances in Crystal Growth

Edited by: A.M. Mancini, C. Paorici and M.L. Terranova

Online since: February 1996

Description: The field of crystal growth has developed steadily with the rapid progress in microelectronics. The purpose of this book is to present a survey of the most recent results related to this subject area. The book will serve as both an up-to-date review for experts and as a reference work on crystal growth for younger scientists and for those who wish to keep track of the advances and technological trends in the field.

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.