Books by Keyword: Silicon

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The application of ceramic materials is currently expanding into a wide range of areas, e.g. gas turbine assembly, engine components, electronic devices, bio-materials etc. But because ceramics pose problems with respect to their brittleness and low reliability, due to their intrinsic nature and/or processing defects, research related to the deformation and fracture of ceramics is still a subject of high priority.

Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.

Description: The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

Description: The 77 papers of the Proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors cover a broad range of rapid dynamic processes in semiconductors and high-Tc superconductors. The latest achievements in the understanding of low-dimensional structures, quantum transport and tunneling, high-speed electronics and photonics, chaos and noise, microwave and infrared radiation generation, and microdevices are presented.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Continuing the scope of the preceding Conferences on Intergranular and Interphase Boundaries in Materials, the present conference focused on the atomic-level modeling of interfaces, the structural and chemical characterization of internal interfaces, on their thermodynamic, kinetic, mechanical, electrical, magnetic behavior and high-Tc superconductivity, and on the application of current knowledge to the design of polycrystalline materials having improved properties. Particular attention was paid to non-equilibrium segregation in irradiated materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: The present publication comprises the proceedings of the 10th International Summer School on Crystal Growth. It is an excellent introduction to the main features of the science and technology of crystal growth.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

Description: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).