Paper Titles
Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
p.335
Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339
Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343
Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347
Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351
Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355
Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359
Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363
Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

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Abstract:

Solution growth is considered to be a powerful method for high quality SiC crystals. This work reports that the conversion process from a threading screw dislocation into a few Frank partial dislocations in basal planes was investigated by synchrotron X-ray topography. This process was effectively assisted by step-flow growth on off-oriented (0001) seed crystals. The Frank partials were not extended into the crystal grown toward the [0001] direction perpendicular to the basal plane. Thus, the conclusion of this study suggests the use of off-oriented seed crystal is important to improve crystal quality.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.351

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Online since:

May 2012

Authors:

Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander Alexander, Yuji Yamamoto, Shunta Harada

Keywords:

Crystal Growth, Screw Dislocation, Silicon Carbide (SiC), Solution Growth, Synchrotron X-Ray Topography

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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