4H-SiC Defects Analysis by Micro Raman Spectroscopy

Nicolo’ Piluso; Massimo Camarda; Ruggero Anzalone; Francesco La Via

doi:10.4028/www.scientific.net/MSF.821-823.335

Paper Titles

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351

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4H-SiC Defects Analysis by Micro Raman Spectroscopy

Abstract:

Recently, a new Micro-Raman technique has been used to detect extended defects in 4H-SiC homoepitaxy. The method is based on the local increase of free carriers in undoped epitaxies (n < 10¹⁶ at/cm^-3) produced by a high power laser. The Longitudinal optical Raman mode (LO) is coupled with the electronic plasma generated by the laser pumping; such a Raman signal is sensitive to crystallographic defects that lead to trapping (or dispersion) of the free carriers which results in a loss of coupling. The monitoring of the LOPC allows determining the spatial morphology of extended defects. The results show that the detection of defects via the induced-LOPC (i-LOPC) is totally independent from the stacking fault photoluminescence signals that cover a large energy range up to 0,7eV thus allowing for a single-scan simultaneous determination of any kind of stacking fault. Also, the i-LOPC method shows the connection between the carrier concentration and the carrier lifetime for undoped film, obtaining meaningful information related to electrical properties of the film, and demonstrating that this technique is a fast, reliable and powerful method to characterize most of crystallographic defects (extended and point-like defects) in the semiconductor field.