Paper Titles
Developing Technologies of SiC Gas Source Growth Method
p.23
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37
150 mm 4H-SiC Substrate with Low Defect Density
p.41
A Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single Crystal
p.45
Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions
p.49
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
p.53
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
p.57

150 mm 4H-SiC Substrate with Low Defect Density

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Abstract:

150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was carried out to investigate the distribution of defects in axial slices cut from the boule. It was found that an increase of dislocations and micropipes was mainly induced by inclusions. After eliminating these inclusions, which were formed in the mid to late stage of the crystal growth, both the screw dislocation density and base plane dislocation density could be decreased down to a magnitude of 102 cm-2, which is comparable to that of high quality 100 mm diameter SiC substrates.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.41

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Online since:

May 2016

Authors:

Yu Qiang Gao*, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jian Qiu Guo, Balaji Raghothamachar, Michael Dudley, Xi Jie Wang

Keywords:

150 mm Diameter, 4H-SiC, Dislocation

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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