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Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs

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Abstract:

This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80 mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to compare the behavior of Wolfspeed’s similarly rated 1.2 kV, 80 mΩ planar MOSFET with the Rohm trench devices. Short circuit withstand time (SCWT) of both designs under nominal operating conditions at room temperature is measured by performing destructive SC tests.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

782-785

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.782

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Online since:

June 2018

Authors:

Bhagyalakshmi Kakarla*, Thomas Ziemann, Selamnesh Nida, Elias Doenni, Ulrike Grossner

Keywords:

Planar, Short Circuit Ruggedness, SiC MOSFET, Trench

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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