Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss

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A shielded gate trench silicon carbide (SiC) metal oxide semiconductor field effect transistor (SG-TMOS) is proposed and investigated by simulation in this paper. The impact of shielded gate design in SG-TMOS on Miller charge (Qgd) as well as conduction resistance (Ron) are comprehensively discussed, showing a tradeoff between Qgd and Ron. Furthermore, the Huang’s Figure of Merit (HFOM) of the SG-TMOS with reasonable design of SG is reduced more than 20%, compared with the conventional trench MOSFET (C-TMOS). Therefore, the proposed SG-TMOS is a competitive next generation device structure for ultra-high switching speed SiC MOSFET.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

765-769

Citation:

X. Li et al., "Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss", Materials Science Forum, Vol. 924, pp. 765-769, 2018

Online since:

June 2018

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$38.00

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