Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss

Abstract:

A shielded gate trench silicon carbide (SiC) metal oxide semiconductor field effect transistor (SG-TMOS) is proposed and investigated by simulation in this paper. The impact of shielded gate design in SG-TMOS on Miller charge (Q_gd) as well as conduction resistance (R_on) are comprehensively discussed, showing a tradeoff between Q_gd and R_on. Furthermore, the Huang’s Figure of Merit (HFOM) of the SG-TMOS with reasonable design of SG is reduced more than 20%, compared with the conventional trench MOSFET (C-TMOS). Therefore, the proposed SG-TMOS is a competitive next generation device structure for ultra-high switching speed SiC MOSFET.

• Periodical: Materials Science Forum (Volume 924)
• Pages: 765-769
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.924.765
• Online since: June 2018
• Authors: Xuan Li*, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiao Сhuan Deng, Bo Zhang
• Keywords: Shielded Gate, Silicon Carbide (SiC), Trench MOSFET, Ultra-Low Switching Loss

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