Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss
A shielded gate trench silicon carbide (SiC) metal oxide semiconductor field effect transistor (SG-TMOS) is proposed and investigated by simulation in this paper. The impact of shielded gate design in SG-TMOS on Miller charge (Qgd) as well as conduction resistance (Ron) are comprehensively discussed, showing a tradeoff between Qgd and Ron. Furthermore, the Huang’s Figure of Merit (HFOM) of the SG-TMOS with reasonable design of SG is reduced more than 20%, compared with the conventional trench MOSFET (C-TMOS). Therefore, the proposed SG-TMOS is a competitive next generation device structure for ultra-high switching speed SiC MOSFET.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
X. Li et al., "Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss", Materials Science Forum, Vol. 924, pp. 765-769, 2018