Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119
p.119
New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123
p.123
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127
p.127
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131
p.131
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136
p.136
High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141
p.141
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149
p.149
Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153
p.153
Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
p.157
p.157
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
Abstract:
Trench-filling epitaxial growth of 4H-SiC by chemical vapor deposition (CVD) with and without HCl was analyzed based on a continuum-diffusion model including the Gibbs–Thomson effect. Qualitative reproduction of the reported observation showed that the effective surface free energy of SiC during CVD can be doubled by the addition of HCl
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Periodical:
Materials Science Forum (Volume 963)
Pages:
136-140
DOI:
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Online since:
July 2019
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© 2019 Trans Tech Publications Ltd. All Rights Reserved
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