Paper Titles
Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
p.709
First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
p.714
Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
p.718
Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
p.722
Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
p.726
Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
p.730
Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
p.734
Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
p.738
Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
p.745

Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors

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Abstract:

4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

726-729

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.726

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Online since:

July 2019

Authors:

Fumiaki Hasebe*, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin Ichiro Kuroki

Keywords:

4H-SiC, Direct Bonding, Image Sensor, Photo Diode

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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References

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