Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique

Farid Sebaai; Guy Vereecke; Xiu Mei Xu; Sylvain Baudot; Fumihiro Amemiya; Kana Komori; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.282.190

Paper Titles

Drying Stability and Critical Height of Repeating Line/Space Structures
p.161

Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
p.168

Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
p.175

Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
p.182

Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique
p.190

Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers
p.194

Factors Influencing Drying Induced Pattern Collapse
p.201

300 mm Wafer Development for Pattern Collapse Evaluations
p.207

AlCu Pitting Prevention in Post Etch Cleaning
p.213

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Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique

Abstract:

The continuous down scaling of the dimensions for the logic devices has imposed to carefully track the pattern collapse issue when cleaning after FIN etch. Showing the limitations of the hot IPA drying technique toward scaled FIN dimensions, a cleaning using a surface modification drying technique has been proposed and successfully implemented. It is also discussed the use of some post treatment solutions to remove the grafted layer used to modify the FIN surface while preserving the integrity of the FIN structures.