Factors Influencing Drying Induced Pattern Collapse

David S.L. Mui; Nathan Musselwhite; Mark Kawaguchi

doi:10.4028/www.scientific.net/SSP.282.201

Paper Titles

Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
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Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
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Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique
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Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers
p.194

Factors Influencing Drying Induced Pattern Collapse
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300 mm Wafer Development for Pattern Collapse Evaluations
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AlCu Pitting Prevention in Post Etch Cleaning
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Investigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray Tool
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Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF
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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Factors Influencing Drying Induced Pattern...

Factors Influencing Drying Induced Pattern Collapse

Abstract:

The collapse of high aspect ratio features is a daunting challenge facing the semiconductor industry. The complex physics and dynamics that govern this process are not entirely understood. Through the use of optical video imaging we have observed pattern collapse in real time. It was found that the liquid meniscus reconfigures itself laterally along the length of the structure as opposed to the expected top-to-bottom drying. Herein, we report on our observations and the physics of drying high aspect ratio structures.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

201-206

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.201

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Online since:

August 2018

Authors:

David S.L. Mui, Nathan Musselwhite*, Mark Kawaguchi

Keywords:

Drying Process, High Aspect-Ratio, Laplace Pressure, Meniscus, Meniscus Reconfiguration, Pattern Collapse, Wet Clean

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* - Corresponding Author

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