Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF

Article Preview

Abstract:

For integrated circuit fabrication on 300 mm wafers, copper interconnections cleaning is generally done with single wafer tools. In this study, we focused on the cleaning of aluminum interconnections, on single wafer tool, with a cheap and easy to use chemistry. Aluminum compatibility with diluted HF solutions was first evaluated, then short and efficient cleaning processes were developped for two kind of applications : cleaning after aluminum line etching and cleaning after final dielectric etching over the aluminum pad. It was demonstrated that cleaning efficiency was poor for the shorter process time (20 s), but improved with process time increase, highlighting a lift-off mechanism for polymers removal. Best process was achieved with 40 s of HF 0.2%, that offers a good compromise between polymer removal and lateral recess of the aluminum.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 282)

Pages:

226-231

Citation:

Online since:

August 2018

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2018 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] Handbook of Cleaning for Semiconductor Manufacturing, fundamentals and applications. Ed. K. A. Reinhardt and R. F. Reidy, Wiley (2011).

Google Scholar

[2] D. J. Maloney, Aluminum Interconnect Cleaning and Drying,, Handbook of Cleaning for semiconductor manufacturing, Ed. K. A. Reinhardt , Wiley. 2011, p.327.

DOI: 10.1002/9781118071748.ch9

Google Scholar

[3] H. Sohn et al., Using cost-effective dilute-acid chemicals to perform post-etch interconnect cleans, MICRO, 23 (5) p.67 (2005).

Google Scholar

[4] R. Ravikumar et al., New Aqueous Clean for Aluminum Interconnects: Part II. Applications,, in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) (Zurich-Uetikon, Switzerland: Scitech Publications, 2002), 51–54.

Google Scholar

[5] N. Sato Effects of wafer spin speed during dry etch post-wet cleaning on a metal line, Microelectronic Engineering 134 (2015) 38–42.

DOI: 10.1016/j.mee.2015.02.002

Google Scholar

[6] S. Verhaverbeke, C. Beaudry, P. Boelen, Aqueous Single pass single wafer Al/Via Cleaning, ECS proceedings, Abs. 761, 204th Meeting, © 2003 The Electrochemical Society, Inc.

Google Scholar

[7] M. Pourbaix, Atlas d'équilibres électrochimiques à 25°C. Ed. Gauthier-Villars and Cie, Paris (1963).

Google Scholar

[8] CHESS Software for chemical equilibrium of species and surfaces modelisation.

Google Scholar

[9] R.C. Santore, C.T. Driscoll, the CHESS Model for calculating Chemical Equilibria in Soils and Solutions,, Chemical Reaction and Reaction Models, Soil Science Society of America special issue 42, (1995) chap.7, pp.357-375.

DOI: 10.2136/sssaspecpub42.c17

Google Scholar